JPH0722843Y2 - プラズマスパッタ型負イオン源 - Google Patents
プラズマスパッタ型負イオン源Info
- Publication number
- JPH0722843Y2 JPH0722843Y2 JP1989105695U JP10569589U JPH0722843Y2 JP H0722843 Y2 JPH0722843 Y2 JP H0722843Y2 JP 1989105695 U JP1989105695 U JP 1989105695U JP 10569589 U JP10569589 U JP 10569589U JP H0722843 Y2 JPH0722843 Y2 JP H0722843Y2
- Authority
- JP
- Japan
- Prior art keywords
- cesium
- container
- ion source
- plasma
- negative ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052792 caesium Inorganic materials 0.000 claims description 37
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 37
- 150000002500 ions Chemical class 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989105695U JPH0722843Y2 (ja) | 1989-09-08 | 1989-09-08 | プラズマスパッタ型負イオン源 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989105695U JPH0722843Y2 (ja) | 1989-09-08 | 1989-09-08 | プラズマスパッタ型負イオン源 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0344855U JPH0344855U (en]) | 1991-04-25 |
| JPH0722843Y2 true JPH0722843Y2 (ja) | 1995-05-24 |
Family
ID=31654456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989105695U Expired - Fee Related JPH0722843Y2 (ja) | 1989-09-08 | 1989-09-08 | プラズマスパッタ型負イオン源 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0722843Y2 (en]) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5236240B2 (en]) * | 1972-06-08 | 1977-09-14 | ||
| JPS5842149A (ja) * | 1981-09-04 | 1983-03-11 | Jeol Ltd | セシウムイオン源 |
| JPS5971235A (ja) * | 1982-10-15 | 1984-04-21 | Hitachi Ltd | イオン源 |
-
1989
- 1989-09-08 JP JP1989105695U patent/JPH0722843Y2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0344855U (en]) | 1991-04-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |